Total dielectric isolation

Abstract From the Canadian patent

Abstract, A process which utilizes an anodized porous silicon technique to form dielectric isolation on one side of a semiconductor device is described. Regions of silicon semiconductor are fully isolated from one another by this technique. The starting water typically is predominently P with a P+ layer thereon. A P or N layer over the P+ layer is formed thereover such as by epitaxial growth. The surface of the silicon is oxidized and a photoresist layer applied thereto. Openings are formed in the photoresist. Openings are formed in the silicon dioxide using the photoresist as a mask and appropriate etching techniques. The openings in the silicon dioxide define the regions to be etched by …