Contacting structure on a semiconductor arrangement
CA 1089571 A · Owner: Thomson-Csf · Inventors: Carballes, Jean C.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
In a new contacting structure on a semiconductor substrate the upper surface of the substrate made of a material corresponding to the formula As1-x Alx Ga, with x#0.3 is partly, covered by a layer of gallium arsenide. The whole of this surface is covered with a metallic layer. The zones of electrical current are localised below the layer of gallium arsenide.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted November 11, 1980. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended November 11, 1997.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.