Semiconductor component
CA 1088214 A · Owner: Siemens Aktiengesellschaft · Inventors: Platzoder, Karl
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
In such electrical components as for example, high-blocking-resistance thyristors high-frequency thyristors, and rapid-action diodes it is desirable to ensure that the, concentration curve for recombination centres in the axial direction of the semiconductor body of the component follows a predetermined course. For this purpose at the anode side, surface of the body elements are provided having respectively a higher and a lower gettering action on the recombination centres. By adjusting the surface areas of the respective elements a, desired concentration drop in the central region of the body in the axial direction can be set up.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted October 21, 1980. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended October 21, 1997.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.