Epitaxial growth of iiia-vb compounds at low temperatures
CA 1086611 A · Owner: N.V. Philips Gloeilampenfabrieken · Inventors: Hallais, Jean-Philippe
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The invention relates to a method for the epitaxial growth from the gaseous phase of III-V-compounds at homogeneous and low temperature by varying the atmosphere. The temperature in the epitaxial space is homogeneous and low (600°C) and the qualities of the deposited layers are considerably improved. Application: Epitaxial growth Figure 1a. -9-
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted September 30, 1980. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended September 30, 1997.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.