Native growth of semiconductor oxide layers

Abstract From the Canadian patent

Abstract of the Disclosure, An amorphous stoichiometric, native, semiconductor, oxide layer with a sharp interface between the oxids layer and the substrate, is grown by directing electrons toward a semiconductor substrate in the presence of oxygen. The source of electrons may be a simple filament. This invention may be implemented with standard plasma growth techniques by extracting the electrons from the plasma production region and directing them to the substrate - i -