PROCESS AND AN APPARATUS FOR PRODUCING SILICON CARBIDE CONSISTING MAINLY OF .beta.-TYPE CRYSTAL
CA 1084235 A · Owner: Ibigawa Electric Industry Co. Ltd. · Inventors: Yokoyama, Takao; Yoshioka, Mitihiro; Enomoto, Ryo
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A process and an apparatus for producing silicon carbide consisting mainly of .beta.-type crystal are disclosed. The fine silicon carbide consisting mainly of .beta.-type crystal is produced by charging the starting material of silica and carbon with d mole ratio of C/SiO2 of 3.2-5.0 into a top portion of a vertical-type reaction vessel having a preheating zone, a heating zone and a cooling zone in this order, descending the starting material by gravity through the reaction vessel, heating the starting material in the heating zone at a temperature of 1,600- 2,100°C by electrically indirect heating in horizontal direction to effect the formation of SiC cooling the, resulting reaction product …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted August 26, 1980. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended August 26, 1997.
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Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.