Irreversible semiconductor switching element and semiconductor memory device utilizing the same

Abstract From the Canadian patent

Specification, Title of the Invention, Irreversible Semiconductor Switching Element and Semiconductor, Memory Device Utilizing the Same Abstract of the Disclosure, The switching element comprised a high resistivity polycrystalline silicon resistor whose resistance irreversibly decreases to a small value at a threshold voltage when the voltage across the resistor reaches the threshold voltage. A semiconductor memory devise is constituted by using the switching element as a memory cell and, a semiconductor gate element for controlling the current flowing through the semiconductor switching element. The switching element has simple construction and can operate with low voltage and low current. …