R.f. power transistor device with controlled common lead inductance
CA 1082372 A · Owner: Motorola, Inc. · Inventors: Kraybill, Albert V.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
An R. F. power transistor device is disclosed wherein the common lead inductance may be controlled to any desired value from zero to relatively high values. The transistor device includes an insulating member of beryllium oxide to one side of which there may be bonded the usual metal heat sink. On the other side of the beryllium oxide member there are metallized areas to which the input and output ground conductors are bonded the input lead is, bonded, the output lead is bonded and the collector of the transistor chip is bonded. One plate of an MOS capacitor is bonded to the input ground lead. In the case of grounded emitter applications, short, small wires are connected from the emitter …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted July 22, 1980. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended July 22, 1997.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.