Power diode
CA 1078075 A · Owner: Siemens Aktiengesellschaft · Inventors: Dannhauser, Friedrich; Porst, Alfred
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The present invention concerns a power diode with a semiconductor body having an inner zone with a given thickness and a given specific resistance and, having on each side of said inner zone at least one outer zone which adjoins the inner zone and has a lower specific resistance in comparison with the inner zone. The diode is characterized in that the specific resistance and the thickness of the inner zone are so adapted to each other that UB<UPT, wherein UB is the avalanche voltage and, UPT is the voltage at which the space-charge zone includes the entire relatively lightly doped inner zone.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted May 20, 1980. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended May 20, 1997.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.