Forming silicon integrated circuit region by the implantation of arsenic and germanium

Abstract From the Canadian patent

Abstract, A method for forming N conductivity-type regions in a silicon substrate comprising ion implanting arsenic to form a region in said substrate having an arsenic atom -2, concentration of at least 1 x 10 As atoms/total atoms in substrate, and ion implanting germanium into said substrate region. Even though the atomic radius of arsenic is very close to that of silicon -- the arsenic radius is only 0.5.delta. smaller -- when high arsenic atom concentra- -2, tions of at least 1 x 10 atoms/total atoms in the substrate are introduced in the substrate and such high, concentrations are only possible when arsenic is ion implanted then atomic misfit dislocations will occur. The implanted …