Semiconductor isolation method
CA 1075374 A · Owner: N.V. Philips Gloeilampenfabrieken · Inventors: De Brebisson, Michel
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A semiconductor device in which a zone of insulating material separates two deep regions from each other. The inversion layer which is caused at the edge of the insulating layer is compensated by means of a layer obtained via ion implantation prior to providing an epitaxial layer. - 14 -
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted April 8, 1980. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended April 8, 1997.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.