Charge coupled device memory

Abstract From the Canadian patent

Semiconductor memory cells include gate conductor-insulatorsemiconductor regions having storage and transfer portions in which the threshold voltage and surface potential-gate conductor voltage characteristics differ as between the storage and transfer portions. This may be achieved by employing relatively thick and relatively thin insulator areas at the storage and transfer portions, or vice versa with a surface charge, accumulation layer at the semiconductor region insulator interface. In a different form of cell structure, the insulator is a uniform thickness layer overlying the storage and transfer portions one of which includes a doped semiconductor region of the same conductivity type …