Method of fabricating large area, high voltage pin photodiode devices
CA 1073558 A · Owner: Rca Corporation · Inventors: Mills, Mark P.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Abstract of the Disclosure, The body of a PIN photodiode is of a silicon semiconductor material. The PIN photodiode has a large area incident surface on which light impinges and is operated at high voltages. In the fabrication of a PIN photodiode as, described, a high concentration of N-type dopant is deposited on the body. It has been discovered that if a phosphorus silicate glass, as a source of N-type dopant is in contact, with a surface of the PIN photodiode body in a high temperature ambient and for an extended period of time lattice, damage on the surface of the silicon body results. These lattice defects are responsible for premature voltage breakdown in the device. In a first method …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted March 11, 1980. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended March 11, 1997.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.