Impact sound stressing for semiconductor devices
CA 1066816 A · Owner: International Business Machines Corporation · Inventors: Schwuttke, Guenter H.; Yang, Kuei-Hsiung
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Methods of making semiconductor devices using the technique of impact sound stressing are disclosed. Impact sound stressing (ISS) is a mechanical acoustical technique to damage, in a known and controlled manner. semiconductor wafers. Wafers are subjected to ISS on the backsides before semiconductor processing steps. The application of ISS before the first high temperature application with control the generation and subsequent direction of flow (gradient) of vacancies (interstitials) generated through all device high temperature processing steps including ion implantation. ISS redirects the flow of vacancies/interstitials into the backside away from the device area of the wafer. Thus, the …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted November 20, 1979. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended November 20, 1996.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.