Method of forming recessed oxide isolation
CA 1065497 A · Owner: Matsushita Electronics Corporation · Inventors: Ohkubo, Yoshio; Kobayashi, Yoshichika
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Disclosed is a method of manufacturing semiconductor devices, which method comprises the processes of: forming at least one recess and at least one projecting portion on a surface of a semiconductor substrate; applying coating material on the recess and on the projecting portion in such manner that the layer of the coating material in the recess is thicker than that on the projecting portion; providing a bared portion at the top of the projecting portion by removing an applied coated material on the silicon dioxide layer of the semiconductor substrate at a uniform removing rate; and diffusing impurities to form different conductivity regions through the bared top portion. The advantages …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted October 30, 1979. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended October 30, 1996.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.