Metal oxide semiconductor field effect transistor

Abstract From the Canadian patent

Abstract of the Disclosure, An improved and simplified method of fabricating field effect transistors in metal oxide semiconductor integrated circuits advantageously employs the differential growth rate, under certain temperature conditions between, oxide on silicon wherein phosphorous has been diffused and on silicon without such diffusion. The improved method of fabrication reduces the number of fabrication steps required, while simultaneously producing field effect transistors with superior operation speeds.