Semiconductor device and method of manufacturing same
CA 1057412 A · Owner: N.V. Philips Gloeilampenfabrieken · Inventors: Smulders, Walter H. M. M.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A high voltage transistor having successively an emitter zone, a highly doped base part a low doped base part, a low doped collector part and a highly-doped collector part. At a distance from the highly doped base part a groove is, provided which extends down into the highly doped collector part and forms therebelow a channel stopper. The groove may be passivated with neutral, or, if desired with positively charged, glass or oxide while still maintaining a high collector-base breakdown voltage. -20-
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted June 26, 1979. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended June 26, 1996.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.