Charge transfer device manufacture
CA 1055159 A · Owner: N.V. Philips Gloeilampenfabrieken · Inventors: Theunissen, Matthias J. J.; Peek, Hermanus L.; Kramer, Roelof P.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The invention resides in a method of manufactoring a C.T.D. comprising overlapping clock electrodes mutually isolated or separated by an intermediate oxide. The surface of the semiconductor body is covered with an oxide layer and a nitride layer on top of the oxide layer. A first set of clock electrodes of polycrystalline silicon is provided on the nitride layer. These poly-electrodes are subjected to an oxidation treatment to form the said intermediate oxide. During this oxidation, the gate oxide below the nitride layer does not become thicker, because of the nitride which ?ks the semiconductor body against the oxidation treatment. After the oxidation treatment the nitride is removed …
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted May 22, 1979. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended May 22, 1996.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.