Insulated gate field effect transistor

Abstract From the Canadian patent

Title of The Invention:, Insulated Gate Field Effect Transistor Abstract of The Disclosure, An insulated gate field effect transistor wherein a source region and drain region having the conduction type opposite to that of the semiconductor substrate of one conduction type being formed in said semiconductor substrate at a distance, the surface of said semiconductor substrate in the channel region between said source region and drain region being provided with an insulated gate electrode the first and, the second high conduction regions having the same conduction type as that of said semiconductor and higher conductivity being formed to conform to the predetermined longitudinal length along …