Power transistor having improved second breakdown capability
CA 1051122 A · Owner: International Business Machines Corporation · Inventors: Jambotkar, Chakrapani G.; Wang, Paul P.; Anantha, Narasipur G.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Abstract of the Disclosure, A high voltage power transistor of the type that includes emitter, base and collector regions of alternate conductivity types and PN junctions at the interface of the emitter and base regions and at the, interface of the base and collector regions. The improvement being an emitter region having at least a plurality of spaced elongated finger-like portions; a means in the base region to lower the base resistance in the transverse direction, this means located centrally beneath the finger-like portions of the emitter and comprised either of regions of low resistivity located centrally and beneath each of the finger-like portions or regions of increased base …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted March 20, 1979. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended March 20, 1996.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.