Method for making transistor structures

Abstract From the Canadian patent

Abstract of the Disclosure, In one embodiment an extremely short channel FET, is made by forming a metal layer over a wafer depositing, silicon dioxide over part of the metal layer oxidizing the, exposed metal, controllably etching a portion of the silicon dioxide to expose a small strip of the nonoxidized metal layer, electroplating the exposed metal strip thereby to, form an extremely narrow gate electrode removing the, deposited SiO2, the metal oxide and the remaining metal layer to leave only the gate electrode and using the gate, electrode as a mask for ion implanting source and drain regions. Since the gate electrode can be made so narrow the channel region is correspondingly short to …