Enhancement mode limited mnos memory device
CA 1049654 A · Owner: Westinghouse Electric Corporation · Inventors: Cricchi, James R.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A metal-nitride-oxide semiconductor device (MNOS) incorporating both a thin oxide region intermediate source, and drain regions and thick oxide regions which cover the source and drain regions. The thin oxide region provides for a variable threshold voltage while the thicker regions provide for a stable threshold voltage which protects the drain and source regions, increasing the breakdown voltage of the device. The structure limits operation of the device to the enhancement mode, making it particularly suitable for use in parallel memory arrays.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted February 27, 1979. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended February 27, 1996.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.