Method for forming recessed regions of thermally oxidized silicon and structures thereof

Abstract From the Canadian patent

Abstract of the Disclosure An improved method for forming a recessed thermal SiO2 isolation region in a monocrystalline silicon semiconductor body having a major surface lying in a (100) plane as defined by the Miller indices by forming an etch resistant and oxidation resistant masking layer on the major surface of the body forming at least one rectilinear annular opening in the masking layer, the opening being oriented with the sides parallel to the 100 directions on the major surface, removing a portion of the exposed body by anisotropic chemical etching, and oxidizing the resultant exposed portions of the body until the surface of the resultant SiO2 and major surface are substantially …