Semiconductor resistor having high value resistance

Abstract From the Canadian patent

Abstract of the Disclosure, A semiconductor resistor structure for providing a high value resistance particularly adapted for space charge limited transistor applications the resistor, being fabricated in a semiconductor body having a resistivity in excess of 1 ohm cm. more preferably in semiconductor material that is nearly intrinsic. The resistor has two parallel elongated surface diffused regions in the body of an impurity similar to the background impurity of the body and having a surface concentration sufficient to provide an ohmic contact the boundaries of said surface diffused regions defined by the interface where the impurity concentration of the diffused region is ten percent more …