Semiconductor integrated circuit device
CA 1048655 A · Owner: Sony Corporation · Inventors: Yagi, Hajime; Tsuyuki, Tadaharu
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A semiconductor integrated circuit device having a construction of complementary PNP-NPN semiconductor devices in a monolithic integrated form. First and second N type epitaxial layers are formed on a common P type semiconductor substrate. A base region of the PNP transistor is produced by the diffusion of an impurity into the second epitaxial layer. The NPN transistor is formed as low emitter concentration type transistor and a part of the second epitaxial layer serves as the transmitter region of the NPN transistor. -1-
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted February 13, 1979. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended February 13, 1996.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.