Method and structure for controlling carrier lifetime in semiconductor devices
CA 1048653 A · Owner: International Business Machines Corporation · Inventors: Joy, Richard C.; Burr, Peter; Ziegler, James F.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Abstract of the Disclosure A method is presented for controlling the minority carrier lifetime in a semiconductor device by selectively implanting inert atoms such as helium argon, neon, krypton, and xenon into specific regions of the device. The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors and/or annular regions projecting inwardly from the surface that surround or …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted February 13, 1979. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended February 13, 1996.
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Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.