Electrodeposition on semiconductor material
CA 1047654 A · Owner: National Research Development Corporation · Inventors: Sullivan, Arthur B. J.; Rain, Norman
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
This invention relates to a method of depositing material onto a semiconductor including the steps of:- (1) Disturbing the lattice structure in or near the surface of the semiconductor, (2) Immersing the semiconductor in an appropriate plating solution (3) Supplying radiative energy to the semiconductor the said radiative, energy consisting at least partially of wavelengths sufficiently short to generate free charge carriers in the said semiconductor in order to deposit, material from the plating solution onto at least part of the surface of the semiconductor. The present invention provides a particularly cheap and suitable process by which metal contacts may be provided on semiconductor …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted January 30, 1979. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended January 30, 1996.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.